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VISHAY
ILD615/ ILQ615
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
* Identical Channel to Channel Footprint * Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Isolation Test Voltage from Double Molded Package, 5300 VRMS * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Dual Channel
A1 C2 A3 C4
8C 7E 6C 5E
Quad Channel
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BSI IEC60950 IEC60965 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
i179052
A1 C2 A C A C A
3 4 5 6 7
16 C 15 E 14 C 13 E 12 C 11 E 10 C 9E
C8
Description
The ILD615/ ILQ615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VACPEAK and a working voltage of 1700 VRMS. The binned min./max. and linear CTR characteristics make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD615/ ILQ615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy worst case interface calculations for
both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at IF = 1.0 mA.
Document Number 83652 Rev. 1.3, 19-Apr-04
www.vishay.com 1
ILD615/ ILQ615
Vishay Semiconductors Order Information
Part ILD615-1 ILD615-2 ILD615-3 ILD615-4 ILQ615-1 ILQ615-2 ILQ615-3 ILQ615-4 ILD615-1X007 ILD615-2X006 ILD615-2X009 ILD615-3X006 ILD615-3X007 ILD615-3X009 ILD615-4X006 ILD615-4X009 ILQ615-1X009 ILQ615-2X007 ILQ615-3X006 ILQ615-3X009 ILQ615-4X007 ILQ615-4X009 Remarks CTR 40 - 80 %, Dual Channel, DIP-8 CTR 63 - 125 %, Dual Channel, DIP-8 CTR 100 - 200 %, Dual Channel, DIP-8 CTR 160 - 320 %, Dual Channel, DIP-8 CTR 40 - 80 %, Quad Channel, DIP-16 CTR 63 - 125 %, Quad Channel, DIP-16 CTR 100 - 200 %, Quad Channel, DIP-16 CTR 160 - 320 %, Quad Channel, DIP-16 CTR 40 - 80 %, Dual Channel, SMD-8 (option 7) CTR 63 - 125 %, Dual Channel, DIP-8 400 mil (option 6) CTR 63 - 125 %, Dual Channel, SMD-8 (option 9) CTR 100 - 200 %, Dual Channel, DIP-8 400 mil (option 6) CTR 100 - 200 %, Dual Channel, SMD-8 (option 7) CTR 100 - 200 %, Dual Channel, SMD-8 (option 9) CTR 160 - 320 %, Dual Channel, DIP-8 400 mil (option 6) CTR 160 - 320 %, Dual Channel, SMD-8 (option 9) CTR 40 - 80 %, Quad Channel, SMD-16 (option 9) CTR 63 - 125 %, Quad Channel, SMD-16 (option 7) CTR 100 - 200 %, Quad Channel, DIP-16 400 mil (option 6) CTR 100 - 200 %, Quad Channel, SMD-16 (option 9) CTR 160 - 320 %, Quad Channel, SMD-16 (option 7) CTR 160 - 320 %, Quad Channel, SMD-16 (option 9)
VISHAY
For additional information on the available options refer to Option Information.
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Document Number 83652 Rev. 1.3, 19-Apr-04
VISHAY
Absolute Maximum Ratings
ILD615/ ILQ615
Vishay Semiconductors
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation Derate linearly from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 1.5 100 1.33 Unit V mA A mW mW/C
Output
Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current t < 1.0 ms Power dissipation Derate linearly from 25 C Test condition Symbol BVCEO BVECO IC IC Pdiss Value 70 7.0 50 100 150 2.0 Unit V V mA mA mW mW/C
Coupler
Parameter Storage temperature Operating temperature Junction temperature Soldering temperature Package power dissipation, ILD615 Derate linearly from 25 C Package power dissipation, ILQ615 Derate linearly from 25 C Isolation test voltage Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C RIO RIO t = 1.0 sec. VISO 2.0 mm distance from case bottom Test condition Symbol Tstg Tamb Tj Tsld Value - 55 to + 150 - 55 to + 100 100 260 400 5.33 500 6.67 5300 7.0 7.0 1012
11
Unit C C C C mW mW/C mW mW/C VRMS mm mm
10
Document Number 83652 Rev. 1.3, 19-Apr-04
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ILD615/ ILQ615
Vishay Semiconductors Electrical Characteristics
VISHAY
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance, junction to lead Test condition IF = 10 mA IR = 10 A VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF VBR IR CO RTHJL Min 1.0 6.0 Typ. 1.15 30 0.01 25 750 10 Max 1.3 Unit V V A pF K/W
Output
Parameter Collector-emitter capacitance Collector-emitter leakage current, -1, -2 Collector-emitter leakage current, -3, -4 Collector-emitter breakdown voltage Emitter-collector breakdown voltage Thermal resistance, junction to lead Package transfer characteristics Channel/Channel CTR match IF = 10 mA, VCE = 5.0 V CTRX/ CTRY 1 to 1 2 to 1 Test condition VCE = 5.0 V, f = 1.0 MHz VCE = 10 V VCE = 10 V ICE = 0.5 mA IE = 0.1 mA Symbol CCE ICEO ICEO BVCEO BVECO RTHJL 70 7.0 500 Min Typ. 6.8 2.0 5.0 50 100 Max Unit pF nA nA V V K/W
Coupler
Parameter Capacitance (input-output) Insulation resistance Channel to channel isolation Test condition VIO = 0 V, f = 1.0 MHz VIO = 500 V, TA = 25 C Symbol CIO RS 1012 500 Min Typ. 0.8 1014 Max Unit pF VAC
Current Transfer Ratio
Parameter Current Transfer Ratio (collector-emitter saturated) Test condition IF = 10 mA, VCE = 0.4 V Part ILD615-1 ILQ615-1 ILD615-2 ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 Symbol CTRCEsat CTRCEsat CTRCEsat CTRCEsat Min Typ. 25 40 60 100 Max Unit % % % %
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Document Number 83652 Rev. 1.3, 19-Apr-04
VISHAY
Parameter Current Transfer Ratio (collector-emitter) Test condition IF = 10 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 5.0 V Part ILD615-1 ILQ615-1 ILD615-2 ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 ILD615-1 ILQ615-1 ILD615-2 ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 Symbol CTRCE CTRCE CTRCE CTRCE CTRCE CTRCE CTRCE CTRCE
ILD615/ ILQ615
Vishay Semiconductors
Min 40 13 63 22 100 34 160 56 Typ. 60 30 80 45 150 70 200 90 320 200 125 Max 80 Unit % % % % % % % %
Switching Non-saturated
Parameter Test condition Symbol Unit ILD615-1 IF mA 10 ton s 3.0 Current Turn-on time Rise time Turn-off time Fall time Propagation H-L tPHL s 1.1 Propagation L-H tPLH s 2.5 VCC = 5.0 V, RL = 75 , 50 % of VPP tr s 2.0 toff s 2.3 tf s 2.0
Switching Saturated
Parameter Test condition Symbol Unit ILD615-1 ILQ615-1 ILD615-2 ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 IF mA 20 10 10 5.0 ton s 3.0 4.3 4.3 6.0 Current Turn-on time Rise time Turn-off time Fall time Propagation H-L tPHL s 1.6 2.6 2.6 5.4 Propagation L-H tPLH s 8.6 7.2 7.2 7.4 VCC = 5.0 V, RL = 1.0 k, VTH = 1.5 V tr s 2.0 2.8 2.8 4.6 toff s 18 25 25 25 tf s 11 14 14 15
Common Mode Transient Immunity
Parameter Common mode rejection output high Common mode rejection output low Common mode coupling capacitance Test condition VCM = 50 VP-P, RL = 1.0 k, IF = 0 mA VCM = 50 VP-P, RL = 1.0 k, IF = 10 mA Symbol CMH CML CCM Min Typ. 5000 5000 0.01 Max Unit V/s V/s pF
Document Number 83652 Rev. 1.3, 19-Apr-04
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ILD615/ ILQ615
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
VISHAY
IF
VCC = 5 V IF = 10 mA F = 10 KHz, DF = 50% VO RL = 75
tD tR t PLH VTH = 1.5 V t PHL
iild615_01 iild615_04
VO
tS
tF
Figure 1. Non-saturated Switching Timing
Figure 4. Saturated Switching Timing
120
IF - Maximum LED Current - mA
100 80 60 40 20 0 -60 TJ (MAX) = 100 C
F = 10 KHz, DF = 50%
VCC = 5 V RL VO
iild615_02
-40
-20
0
20
40
60
80
100
Ta - Ambient Temperature - C
iild615_05
Figure 2. Saturated Switching Timing
Figure 5. Maximum LED Current vs. Ambient Temperature
IF
PLED - LED Power - mW
200
150
tPLH VO tPLH tS 50%
100
50
tD
iild615_03
tR ton toff
tF
iild615_06
0 -60 -40
-20 0 20 40 60 Ta - Ambient Temperature - C
80
100
Figure 3. Non-saturated Switching Timing
Figure 6. Maximum LED Power Dissipation
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Document Number 83652 Rev. 1.3, 19-Apr-04
VISHAY
ILD615/ ILQ615
Vishay Semiconductors
1.4
VF - Forward Voltage - V
1000 Ta = -55 C
ICE - Collector Current - mA
1. 3 1.2 1.1 1.0 0.9 0.8 0.7 .1
100
Rth = 500 C/W
Ta = 25 C
10 25 C 50 C 75 C 90 C
1
Ta = 85 C
.1 .1 10 1 VCE - Collector-Emitter Voltage - V 100
1 10 IF - Forward Current - mA
100
iild615_10
iild615_07
Figure 7. Forward Voltage vs. Forward Current
Figure 10. Maximum Collector Current vs. Collector Voltage
10000
If(pk) - Peak LED Current - mA
CTRNF - Normalized CTR Factor

2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce NCTRce(sat) 0.5 TA = 25 C 0.0 .1 1 10 IF - LED Current - mA 100
Duty F actor 1000 .005 .01 .02 .05 .1 .2 .5 t
DF = /t
1.5
1.0
100
10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t - LED Pulse Duration - s
iild615_11
iild615_08
Figure 8. Peak LED Current vs. Pulse Duration, Tau
Figure 11. Normalization Factor for Non-saturated and Saturated CTR vs. IF
200
PDET - Detector Power - mW
CTRNF - Normalized CTR Factor
2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce 1.0 NCTRce(sat) TA = 50 C 0.0 .1 1 10 IF - LED Current - mA 100
150
1.5
100
0.5
50
0 -60
iild615_09
-40
-20
0
20
40
60
80
100
iild615_12
Ta - Ambient Temperature - C
Figure 9. Maximum Detector Power Dissipation
Figure 12. Normalization Factor for Non-saturated and Saturated CTR vs. IF
Document Number 83652 Rev. 1.3, 19-Apr-04
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ILD615/ ILQ615
Vishay Semiconductors
VISHAY
CTRNF - Normalized CTR Factor
2.0
ICEO - Collector-Emitter - nA
1.5
Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V NCTRce
10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20
iild615_16
1.0
Vce = 10 V Typical
0.5
NCTRce(sat) TA = 70 C
0.0 .1 10 IF - LED Current - mA 1 100
0
20
40
60
80
100
TA - Ambient Temperature - C
iild615_13
Figure 13. Normalization Factor for Non-saturated and Saturated CTR vs. IF
Figure 16. Collector Emitter Leakage vs. Temperature
CTRNF - Normalized CTR Factor
2.0
tpLH - Propagation Low-High s
1000
4.0 3.5 3.0 tpLH 2.5 2.0 tpHL 1.5
tpHL - Propagation High-Low s tpHL - Propagation High-Low s
1.5
Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V
IF = 10 mA VCC = 5 V, Vth = 1.5 V 100
1.0
NCTRce
0.5 NCTRce(sat) TA = 100 C 0.0 .1 1 10 IF - LED Current - mA 100
10
1 .1 1 10 100 RL - Load Resistor - k
1.0
iild615_14
iild615_17
Figure 14. Normalization Factor for Non-saturated and Saturated CTR vs. IF
Figure 17. -1, Propagation Delay vs. Collector Load Resistor
35
ICE - Collector Current - mA
1000
tpLH - Propagation Low-High s
2.5 IF = 10 mA VCC = 5 V, Vth = 1.5 V
30 25 20 15 10 5 0 0 10 20 30 40 50 60 25C 85C 70C 50C
100 tpLH
2.0
10
tpHL
1.5
1 .1 1 10 100 RL - Collector Load Resistor - k
iild615_18
1.0
iild615_15
IF - LED Current - mA
Figure 15. Collector-Emitter Current vs. Temperature and LED Current
Figure 18. -2, -3, Propagation Delay vs. Collector Load Resistor
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Document Number 83652 Rev. 1.3, 19-Apr-04
VISHAY
ILD615/ ILQ615
Vishay Semiconductors
Figure 19. -4, Propagation Delay vs. Collector Load Resistor
1000
tpLH - Propagation Low-High s
2.5
tpHL - Propagation High-Low s
IF = 10 mA VCC = 5 V, Vth = 1.5 V 100 tpLH 10 tpHL 1 .1 1 10 100 RL - Collector Load Resistor - k 1.0 1.5 2.0
iild615_19
Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A
3
2
1
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Document Number 83652 Rev. 1.3, 19-Apr-04
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ILD615/ ILQ615
Vishay Semiconductors Package Dimensions in Inches (mm)
VISHAY
pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16
ISO Method A
.779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56)
i178007
.300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35)
.020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27)
10 typ. 3-9 .008 (.20) .012 (.30)
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
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Document Number 83652 Rev. 1.3, 19-Apr-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
ILD615/ ILQ615
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83652 Rev. 1.3, 19-Apr-04
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